随着光电子学在过去几十年的发展，氧化铟锡（ITO）已经成为显示器和触摸屏等光电器件中最合适的透明导电材料，但它存在着涉及其价格及物理化学性质的关键性问题。因此，我们期望的是通过简单和便宜的方法来制备大面积均匀，同时具有最优的透光率和最小的面电阻的透明导体。本实验过程分为三步：将二氧化硅分散系刮涂到PET基底上烘干形成裂纹模板；利用真空蒸发镀膜将金属蒸气粒子沉积到裂纹中去得到透明金属网络电极；利用制备得到的透明电极及电介质PDMS制作一个3×3的透明电容器。我们得到透明金属网络电极的面阻值约为45Ωsq-1，单层金属网络的透光率达到95%，所制备的透明电容经测试其电容性能较好，平均透光率达85%。

关键词 二氧化硅裂纹模板 真空蒸镀 透明电极 透明电容 透光率

Title Preparation of transparent electronic materials and transparent devices

Abstract：With the developments in optoelectronics during last few decades, indium tin oxide (ITO) has become the most suitable transparent conducting material in optoelectronic devices, namely displays and touch screens. There are, however, some critical issues associated with ITO related to its price and physicochemical properties. Therefore, we expect to prepare a transparent conductor with large area uniformity and optimum light transmittance minimum sheet resistance by a simple and inexpensive method. This is a three step process involving roll coating of silicon dioxide colloidal dispersions onto PET, drying to induce crack network formation, the metal vapor particles are deposited into the cracks by vacuum evaporation coating to obtain a transparent metal network electrode, a 3×3 transparent capacitor is fabricated using the prepared transparent electrode and dielectric PDMS.The sheet resistance of  the transparent metal network electrode is about 45Ωsq -1 ,and the  single-layer metal network transmittance is 95%.The transparent capacitor works well and its average light transmittance is 85%.

Keywords  silica crack template  vacuum deposition transparent electrode transparent capacitor transmittance

目 次

1 绪论 1

1.1 引文 1

1.2 透明金属网络电极的发展 1

1.3 研究内容及主要工作 2

2 裂纹形成的原理、制备过程及结果 3

2.1 裂纹形成原理 3

2.2 裂纹形成的影响因素 5

2.3 二氧化硅薄膜的制备过程及结果 5

3 透明电极的制备原理及过程 9

3.1 真空蒸发镀膜的原理 9

3.2 透明金属网络的形成 10

3.3 透明电极的制备过程 10

3.4 四探针法测量面电阻原理及结果