摘要：二硫化钼是一种重要的层状过渡金属硫化物，在电化学催化产氢领域有着极大的应用潜力。本课题采用传统的高温固相法，制备了钽掺杂的二硫化钼二维晶体，掺杂量可高达15%。随后利用XRD、SEM、EDS、PPMS、Raman光谱测试仪和电化学催化产氢系统等仪器设备探究了钽的掺杂量对二硫化钼的结晶性、晶体结构、微观形貌、电学性能和电化学催化产氢性能的影响。结果表明，掺杂量增加，材料的纯度不变，但是材料的结晶度降低。掺杂对材料的微观形貌和晶体结构基本没有影响。掺杂量达到15%时，材料仍然为半导体，但由于导电率的提高，材料的电催化产氢性能相较于本征二硫化钼有较大提升。

关键词 二硫化钼 掺杂 电学性质 电催化产氢

毕业设计说明书外文摘要

Title Solid Phase Preparation of Tantalum Doped Molybdenum Disulfide and Its Electrical Properties

Abstract：Molybdenum disulfide is one of the paramount layered transition-metal dichalcogenides(TMDs), which has tremendous potential in the field of hydrogen evolution reaction(HER). The first and foremost, the project utilizes conventional high-temperature solid phase method to prepare molybdenum disulfide doped tantalum atom and the maximum doping amount is  approximately

15%. What’s more, by using XRD、SEM、EDS、PPMS and so on, the crystallinity、crystal

structure、microstructure、electrical performance and hydrogen evolution reaction performance of the material are characterized. The results are as follows. As the doping amount increases, the purity of the material is constant, but the crystallinity of the material decreases. Doping has little effect on the microstructure and crystal structure of the material. When the doping amount reaches 15%, the material is still semiconductors. However, hydrogen evolution reaction performance of the material is superior than that of the intrinsic molybdenum disulfide due to

the improvement of the conductivity.

Keywords    Molybdenum  disulfide    dope    electrical  properties    hydrogen  evolution reaction

目 录

1绪论 1

1.1二硫化钼的特性与应用1

1.2二硫化钼的制备方法5

1.3二硫化钼掺杂的研究现状6

1.4本文主要研究内容及意义7

2实验仪器及方法 9

2.1实验试剂与仪器9

2.2表征方法9

2.3电催化性能测试.10

3钽掺杂二硫化钼二维晶体的制备及其性能表征 11

3.1引言.11

3.2钽掺杂二硫化钼二维晶体的制备.11

3.3钽掺杂二硫化钼二维晶体的表征.12

3.4钽掺杂二硫化钼二维晶体的电催化性能.16

结论 20

致谢 21

参考文献 23

1 绪论

1.1 二硫化钼的特性与应用

1.1.1 二硫化钼的晶体结构

自2004年石墨烯[1-2]被发现以来，二维层状材料，特别是过渡金属硫化物(TMDs)，便吸引了研究者的极大关注。TMDs的化学通式可以写为MX2。其中，M为元素周期表中的IV族、V族、VI族元素，X为硫族元素：S、Se、Te[3-5]。TMDs可能是半导体，也可能是半金属或金属，甚至可能是超导体[6-7]。