压电厚膜微型芯片的研究+文献综述
首先，利用传统的固相烧结法制备了压电陶瓷片，并对其性能进行检测，得到符合制备声表面波器件(SAW)的陶瓷，其具体的参数分别为：d33=430pC/N、kp=0.70、εr=2126、Qm=163.98、tanδ=0.014、TC=360℃。
其次，用先烧陶瓷柱后切割再抛光的方法制备厚度为100µm、表面平整的压电陶瓷厚膜。
最后，根据设计好的叉指电极的尺寸参数，采用光刻的方法成功制备出了接近10µm线宽的叉指电极，得到了声表面波器件(SAW)。
关键词 声表面波(SAW)器件 压电厚膜 叉指电极
毕业论文设计说明书外文摘要
Title The study of piezoelectric thick films microchips
Abstract
Surface acoustic wave device has some characteristics, such as miniaturization、multifunction、high frequency、high reliability、digital output and so on. So surface acoustic wave device is widely used in many kinds of electronic systems of military and civil, such as mobile communications、aviation and spaceflight、radar、 electronic counterwork、telecontrol and telemetry、television and so on. Surface acoustic wave device has great potential in application and wider foreground in development, so it is significative to investigate surface acoustic wave device. In this paper, the piezoelectric thick film was prepared according to the 0.98PZT-0.02SNN piezoelectric ceramic material, and the saw device (SAW) was successfully fabricated on the basis of the piezoelectric thick film.
Firstly, using conventional solid-state sintering method to preparing piezoelectric ceramic pieces, and piezoelectric properties were comparably studied. The result showed that the ceramic is suit for saw device. The properties are: d33=430pC/N、kp=0.70、εr=2126、Qm=163.98、tanδ=0.014、TC=360℃。
Secondly, we sintered the ceramic column and then cutting and polishing it. After that we get the piezoelectric thick film. The thickness of film is 100 µm and the surface of film is very smooth.
Finally, according to the size of interdigital electrode which have already designed, we successfully get the interdigital electrode. The width of finger was nearly 10μm and we get the saw device.
Keywords Surface acoustic wave device Piezoelectric thick film Interdigital electrode
目 次
1 绪论 1
1.1 压电厚膜 1
1.1.1 压电效应 1
1.1.2 压电材料的主要参数 1
1.1.3 压电厚膜的应用 3
1.2 锆钛酸铅系陶瓷 3
1.3 声表面波器件概述 5
1.3.1背景介绍 5
1.3.2 声表面波器件的工作原理 5
1.3.3 声表面波器件的发展现状 7
2 声表面波器件的制备 9
2.1 固相烧结法制备0.98PZT-0.02SNN压电陶瓷 9
2.2陶瓷柱切割形成薄片 12
2.3压电薄片表面抛光 12
2.4光刻叉指换能器 12
3压电陶瓷及其微型芯片的性能 15
3.1 0.98PZT-0.02SNN压电陶瓷性能 15
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