本论文采用真空磁控溅射法制备多层Al/CuO复合薄膜,利用X射线衍射(XRD)、扫描电子显微镜(SEM)对Al/CuO复合薄膜进行性能表征,发现实验所得Al/CuO复合薄膜成膜质量较好。通过对溅射时间的控制,可以制备得到不同调制周期和调制比的Al/CuO复合薄膜。通过对薄膜各膜层和各膜层之间的电阻测定,可以发现,Al薄膜电阻较均匀一致,具有良好导性;CuO薄膜电阻随薄膜厚度的增加而增加;单层Al膜与CuO膜之间,电阻在KΩ级别以上,说明Al膜与CuO膜之间存在肖特基接触。随着CuO厚度的增加,单层Al膜与CuO膜之间的电阻都有增大。通过电击穿实验,可以证明Al/CuO复合薄膜存在一定的击穿电压。
关键词 Al/CuO复合薄膜 电阻测定 肖特基接触 电击穿
毕业设计说明书(论文)外文摘要
Title Preparation and resistance characterization
of the Al/CuO multilayer films
Abstract
This paper presented vacuum magnetron sputtering method for Al/CuO multilayer films. The substrates were fixed on a rotating holder and alternately exposed to a flow of the substance that is deposited from different targets. The number of layers is equal to the number of revolutions of the holder, and the thickness of each layer is determined by the exposure time, the power of the source and the source-to-substrate distance. The prepared films were characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the results show that Al/CuO multilayer films have good qualities. The films were sputtered from Al and CuO simultaneously operating magnetron targets. Determination of the resistance of the films show that the Al film has a good conductivity, and the resistance of CuO films increase with increasing thickness. Resistance between Al and CuO films is in KΩ level, which prove that threshold of electrical stimulation exists for Schottky Barrier structured Al/CuO multilayer films, and the reasons can be related to the series surface contact Schottky junctions formed between inpidual Al and CuO films.
Keywords Al/CuO multilayer films Resistance measurement
Schottky contacts Electrical breakdown
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