SCB火工品等离子体温度特性测试+文献综述
（1）在同一电容下，随着电压的升高，等离子体的温度随之升高；
（2）在同一电压下，随着电容的增大，等离子体的温度随之升高；
（3）当输入能量相同时，随着电容的增大，等离子体的温度随之降低；增大SCB 火工品的发火电容，有利于产生高温等离子体，从而提高SCB桥膜输出能量。
（4）在发火能量足够大时，桥膜的尺寸越大，质量也就越大，产生的等离子体的峰值温度也就越高。在保证SCB可靠发火的同时，增加SCB桥膜尺寸可以提高SCB桥膜输出能量。
关键词：半导体桥；等离子体温度；原子发射光谱法；放电脉冲5745
毕业设计说明书（论文）外文摘要
Title Study on Characteristics of Plasma Temperature
Generated by Semiconductor Bridge(SCB)
Abstract
The plasma temperature of the semiconductor bridge (SCB) was measured in real-time based on the relative intensity ratio of two lines of atomic emission spectrum.In the case of different discharge pulses,the plasma temperature and the influence of pulse energy on it were studied.The results show that:
(1) Under a same capacitance level,increasing of voltage,the temperature increases as well;
(2) Under a same voltage level,the plasma temperature raise while capacitance increases;
(3) When the input energy is the same, with the capacitance increases, the plasma temperature decreases; Increase the SCB EED firing capacitor, to generate high temperature plasma, thereby increasing the energy of the SCB bridge film output.
（4）Ignition energy is large enough, the larger the size of the bridge membrane, the greater the quality, the higher the peak temperature of the plasma. To ensure the SCB and reliable ignition at the same time, increasing the the SCB bridge membrane size can improve the the SCB bridge film output energy.
Keywords semiconductor bridge; plasma temperature; atomic emission spectrometry; discharge pulse
目 次
1 绪论 1
1.1 SCB火工品简介 1
1.2 SCB火工品发火机理研究现状 2
1.3 SCB芯片结构参数对电爆性能的影响 3
1.4 SCB火工品等离子体参数对发火性能的影响 7
1.5 等离子体温度的测试方法 8
1.6 本课题的研究内容 11
2 原子发射光谱双谱线法用于SCB等离子体温度的测试 11
2.1 试验样品 11
2.2 试验装置 12
2.3 原子发射光谱双谱线法测量原理 14
3 电容放电电压对SCB发火性能及等离子体温度的影响 17
3.1 不同发火电压下SCB的电爆特性参数 17
3.2 SCB等离子体温度随时间变化的关系 19
3.3 电容放电电压对等离子体峰值温度的影响 20
3.4 本章小结 20
4 放电电容对SCB等离子体温度的影响 21
4.1 SCB等离子体温度随时间变化的关系 21
4.2 不同放电电容对等离子体峰值温度的影响 22
4.3 本章小结 22
5 发火条件对SCB等离子体温度的影响 23
5.1 SCB等离子体温度随时间变化的关系 23
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