硫化物二维半导体阻变存储器
本毕业论文通过一步法制备 Ag2S纳米晶。扫描电镜等多种表征方法证明所制得的纳米晶为结晶性及单分散性良好的 Ag2S 纳米晶，粒径分布在 10nm 左右。而后本文利用旋涂的方法制作 Ag2S 纳米晶薄膜器件并测试其电学性能。I-V 测试结果表明所制得的阻变器件具有很高的高低阻值比，高达 200 倍。同时，该器件具有较低的操作电压，良好的循坏稳定性和数据保留性，具有很大的应用前景。最后尝试提出其阻变机理，为进一步提高器件的性能提供更多的理论依据。 20876
关键词 阻变存储器 硫化银纳米晶 阻变机理 单分散 忆阻效应
Title Two-dimensional semiconductor of sulfide-based Resistive
Memories
Abstract
With the rise of mobile intelligent products, mobile information storage
technology is becoming one of the important research fields of information
technology. On account of the simple structure,low cost and excellent
performance of resistive random access memory(RRAM),it has become the popular
candidate to displace Si-based flash memory.This paper prepared two
-dimensional film devices which have resistive switching effect by using
sufide semiconductor,and we studied its switching performance.
The papper prepared Ag2S nanocrystal by one-step method. Varieties of
characterization methods,such as scanning electron microscope,have proved the
sample’s great crystalline and monodisperse ,which has an average grain size
of 10nm.Then we fabricate nanocrystalline Ag2S thin-film device by using
spin-coating and test the electrical properties.The result of I-V test shows
that the radio of HRS to LRS of prepared resistive device is as high as
200.Simultaneusly ,this device shows a great application prospect because of
its low operating voltage ,great stability and data retention
characteristics.In the end, we try to propose the resistive switching
mechanism in order to provide more theoretical basis to further improve
performance of the devive.
Keywords resistive random access memory(RRAM); Ag2S nanocrystals;
resistive mechanism; monodisperse; resistance effect
目 次
1 绪论 1
1.1 引言 1
1.2 阻变存储器概述 2
1.2.1 阻变存储层的材料 3
1.2.2 现有阻变主要机理模型 5
1.3 本论文研究意义及内容 6
1.3.1 本研究意义 6
1.3.2 论文研究内容 7
2 实验制备方法与原理性 8
2.1 材料制备与表征方法 8
2.1.1 阻变层薄膜材料的制备 8
2.1.2 材料表征方法 9
2.2 器件组装 10
2.2.1 衬底的清洗 10
2.2.2 阻变层的制备 10
2.2.3 蒸镀电极 10
2.3 本章小结 11
3 单分散 Ag2S 纳米晶的制备与表征 12
3.1 单分散Ag2S 纳米晶实验合成 . 12
3.2 测试与表征 13