反铁磁的各向异性磁电阻效应及其电场调控
毕业论文关键词 反铁磁 各向异性磁电阻 铁磁学 霍尔效应
Title Anisotropic Magnetoresistance in Antiferromagnets and Controlling by Electric Field
Abstract
Anisotropic magnetoresistance (AMR) effect is a classic magnetic
resistance phenomenon in the field of ferromagnetics. However, there is
little research reports concerning the effect in antiferromagnets. In this
paper, by using the ferromagnetic insulator YIG and antiferromagnetic film
IrMn, the YIG/IrMn double layers sample is prepared. Further, the AMR
effect in antiferromagnets is explored preliminarily based on the sample.
Results show that there exists two different mechanisms for the occurring
of AMR in antiferromagnets under high and low temperature respectively,
and the effect can be strongly influenced by the thickness of the
antiferromagnetic film. Additionally, the research contents are enriched
by means of the exploration on anomalous or ordinary hall effect. Due to
the complicated theoretical knowledge involved, more supplementary
experiments and theoretical analysis are required to understand the
physical nature thoroughly.
Keywords Antiferromagnets Anisotropic Magnetoresistance
Ferromagnetics Hall Effect
目 次
1 引言 1
1.1 自旋电子学 1
1.2 各向异性磁电阻效应 4
1.3 反铁磁 5
1.4 反铁磁 IrMn 的研究概述 7
1.5 本论文的研究思路与内容 9
2 实验原理及方法 11
2.1 薄膜样品的制备 11
2.2 薄膜样品霍尔器件的制备 12
2.3 薄膜样品的结构与成分表征 14
2.4 薄膜样品的磁电性能测试 15
2.5 三种常见的霍尔效应 18
3 磁电阻效应初探及样品表征 22
3.1 铁磁金属的各向异性磁电阻 22
3.2 顺磁性金属的各向异性磁电阻 24
3.3 反铁磁 IrMn 薄膜样品的表征 26
3.4 本章小结 28
4 反铁磁 IrMn 各向异性磁电阻效应的初探 29
4.1 高温下反铁磁 IrMn 的各向异性磁电阻效应 29
4.2 低温下反铁磁 IrMn 的各向异性磁电阻效应 32
4.3 场冷模式对反铁磁 IrMn 各向异性磁电阻效应的影响 36
4.4 薄膜基底对反铁磁IrMn 各向异性磁电阻效应的影响 36
4.5 本章小结 38
5 反铁磁 IrMn 各向异性磁电阻效应的进一步研究 40
5.1 薄膜厚度对反铁磁IrMn 各向异性磁电阻效应的影响 40
5.2 反铁磁 IrMn 反常（正常）霍尔效应的研究 43
5.3 本章小结 46
结论 47
致谢 48
参考文献491 引言
二十一世纪是信息技术高速发展的时代，席卷全球的信息科技也给人类的生产
和生活方式带来了深刻的变革。随着半导体工艺与集成电路研究的不断深入与完善，